IRF7832TRPBF vs IRLR3410TRPBF Comparison
Detailed side-by-side comparison of IRF7832TRPBF by Infineon and IRLR3410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7832TRPBF | IRLR3410TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.81 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7832TRPBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (trench MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | β |
| Total Gate Charge (Qg) typical | 34 nC | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ) | -55C to +175C (junction) |
| Package | 8-SO (SOIC-8) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life at <30C/85% RH) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Drain-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 17 A |
| Power Dissipation (Pd) at Tc=25C | β | 79 W |
| On-Resistance RDS(on) max | β | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | β | Logic-level (drive ~4.5V) |
| Total Gate Charge (Qg) | β | 22.7 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Drain Tab Connection | β | Tab electrically tied to Drain |
| Polarity | β | N-Channel enhancement mode |