IRF7854TRPBF vs IPT012N08NF2SATMA1 Comparison

Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IPT012N08NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT012N08NF2SATMA1

IPT012N08NF2SATMA1 - 80V, 1.2mΞ© N-Channel MOSFET | Infineon

IPT012N08NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IRF7854TRPBF IPT012N08NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $3.74
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Ta=25Β°C 10 A β€”
Power Dissipation (PD) at Ta=25Β°C 2.5 W β€”
On-Resistance RDS(on) max at VGS=10V 13.4 mΞ© β€”
Gate-Source Threshold Voltage VGS(th) max 4.9 V β€”
Total Gate Charge Qg 27 nC β€”
Package SO-8 PG-HSOF-8-10 (HSOF)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (planar N-channel) Trench MOSFET (OptiMOS-derived)
Operating Temperature Range -55Β°C to +150Β°C (TJ) β€”
Lead-Free / RoHS Yes (PBF suffix, lead-free) β€”
Qualification JEDEC industrial, Normal level β€”
Solder Process Reflow and wave-solderable β€”
Gate Drive Voltage (recommended) 10 V β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPT012N08NF2SATMA1
Product Family β€” StrongIRFETβ„’
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 80 V
Continuous Drain Current (ID) at Ta β€” 39 A
Pulsed Drain Current (IDM) at Tc β€” 351 A
On-Resistance RDS(on) Typ @ VGS=10V β€” 1.2 mΞ©
Gate Threshold Voltage (VGS(th)) Max β€” 3.8 V
Power Dissipation (PD) at Ta β€” 3.8 W
Power Dissipation (PD) at Tc β€” 300 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count (incl. tab) β€” 9 pins (8+tab)
RoHS Status β€” Compliant
Packing β€” Tape & Reel (T/R)

Datasheets & Resources

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