IRF7854TRPBF vs IRF7103TRPBF Comparison

Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRF7103TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7854TRPBF IRF7103TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.47
FET Type N-Channel Dual N-Channel
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Ta=25Β°C 10 A β€”
Power Dissipation (PD) at Ta=25Β°C 2.5 W β€”
On-Resistance RDS(on) max at VGS=10V 13.4 mΞ© β€”
Gate-Source Threshold Voltage VGS(th) max 4.9 V β€”
Total Gate Charge Qg 27 nC β€”
Package SO-8 SO-8 (PG-DSO-8-902)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (planar N-channel) IR MOSFETβ„’ (HEXFET equivalent)
Operating Temperature Range -55Β°C to +150Β°C (TJ) -55C to +150C (TJ)
Lead-Free / RoHS Yes (PBF suffix, lead-free) β€”
Qualification JEDEC industrial, Normal level β€”
Solder Process Reflow and wave-solderable β€”
Gate Drive Voltage (recommended) 10 V β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF7103TRPBF
Configuration β€” Common Source, Dual Die
Drain-to-Source Voltage (VDS) β€” 50 V
Continuous Drain Current (ID) β€” 3 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM value]
On-Resistance RDS(on) max β€” 130 mOhm @ VGS=10V
On-Resistance RDS(on) typ β€” 0.11 ohm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Total Power Dissipation (PD) β€” 2 W
Soldering Method β€” Vapour phase, infrared, wave soldering
MSL Level β€” 1
Lead-Free β€” Yes (Pb-free per TRPBF suffix)
RoHS Status β€” Compliant

Datasheets & Resources

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