IRF7854TRPBF vs IRF7389PBF Comparison

Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRF7389PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7854TRPBF IRF7389PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.61
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Ta=25Β°C 10 A β€”
Power Dissipation (PD) at Ta=25Β°C 2.5 W β€”
On-Resistance RDS(on) max at VGS=10V 13.4 mΞ© β€”
Gate-Source Threshold Voltage VGS(th) max 4.9 V β€”
Total Gate Charge Qg 27 nC β€”
Package SO-8 SO-8 (SOIC-8) surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET (planar N-channel) Generation V HEXFET
Operating Temperature Range -55Β°C to +150Β°C (TJ) [DATA_NEEDED: full operating temperature range]
Lead-Free / RoHS Yes (PBF suffix, lead-free) β€”
Qualification JEDEC industrial, Normal level β€”
Solder Process Reflow and wave-solderable β€”
Gate Drive Voltage (recommended) 10 V β€”
Configuration β€” N and P-Channel (complementary half-bridge)
Drain-to-Source Voltage N-Ch (V_DSS) β€” 30 V
Drain-to-Source Voltage P-Ch (V_DSS) β€” -30 V
Continuous Drain Current N-Ch (I_D) β€” 7.3 A
Continuous Drain Current P-Ch (I_D) β€” -5.3 A
On-Resistance N-Ch R_DS(on) max β€” 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max β€” 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical β€” 22 nC
Total Gate Charge P-Ch (Q_g) typical β€” 23 nC
Power Dissipation (P_D) β€” 2.5 W
Pinout β€” Industry-standard complementary SO-8
RoHS Status β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes
Avalanche Rated β€” Yes (fully avalanche rated)

Datasheets & Resources

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