IRF7854TRPBF vs IRFH5300TRPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRFH5300TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5300TRPBF
IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
IRFH5300TRPBF β ActiveSpecification Comparison
| Parameter | IRF7854TRPBF | IRFH5300TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.45 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | 1.4 mOhm |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | PQFN-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55C to +150C |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Qualification | JEDEC industrial, Normal level | β |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 40 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | 336 A |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) | β | 50 nC |
| Power Dissition at TA=25C | β | 3.6 W |
| Power Dissipation at TC=25C | β | 250 W |
| Gate Drive Level | β | Logic-level (5V optimized) |
| JEDEC Qualification | β | Yes |
| RoHS Status | β | Compliant |