IRF7854TRPBF vs IRFH5301TRPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRFH5301TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5301TRPBF
IRFH5301TRPBF - 30V 100A N-Channel HEXFET MOSFET | Infineon
IRFH5301TRPBF β ActiveSpecification Comparison
| Parameter | IRF7854TRPBF | IRFH5301TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.36 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | PQFN (5x6 mm) Single Die |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Qualification | JEDEC industrial, Normal level | JEDEC standard |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (TA, 25C) | β | 35 A |
| Continuous Drain Current (TC, 25C) | β | 100 A |
| RDS(on) Max @ VGS=10V | β | 1.85 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | β | 37 nC (typical) |
| Power Dissipation (TA) | β | 3.6 W |
| Power Dissipation (TC) | β | 110 W |
| Gate Drive Logic Level | β | Optimized for 5 V VGS drive |
| RoHS / Halogen-Free | β | RoHS compliant, Halogen-free |