IRF7854TRPBF vs IRFS3006TRLPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRFS3006TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7854TRPBF | IRFS3006TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.40 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | D2PAK (TO-263AB), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR HEXFET (Planar DMOS) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Qualification | JEDEC industrial, Normal level | β |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Drain-Source Voltage (Vds) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25C | β | 195 A |
| Pulsed Drain Current (Idm) | β | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | β | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | β | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | β | 200 nC |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | β | 375 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | β | Lead-Free (Pb-Free), RoHS Compliant |
| MSL Level | β | 1 |
| Avalanche Energy Rating | β | Avalanche rated (per Infineon datasheet) |