IRF7854TRPBF vs ISA150233C03LMDSXTMA1 Comparison

Detailed side-by-side comparison of IRF7854TRPBF by Infineon and ISA150233C03LMDSXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 βœ“ Active

Specification Comparison

Parameter IRF7854TRPBF ISA150233C03LMDSXTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.61
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID) at Ta=25Β°C 10 A β€”
Power Dissipation (PD) at Ta=25Β°C 2.5 W β€”
On-Resistance RDS(on) max at VGS=10V 13.4 mΞ© β€”
Gate-Source Threshold Voltage VGS(th) max 4.9 V β€”
Total Gate Charge Qg 27 nC β€”
Package SO-8 PG-DSO-8-920 (SO-8 with thermal pad)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (planar N-channel) OptiMOS 3 trench MOSFET
Operating Temperature Range -55Β°C to +150Β°C (TJ) -55 C to +150 C (junction)
Lead-Free / RoHS Yes (PBF suffix, lead-free) β€”
Qualification JEDEC industrial, Normal level β€”
Solder Process Reflow and wave-solderable β€”
Gate Drive Voltage (recommended) 10 V β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 3
Configuration β€” Dual N-channel + P-channel (1 N + 1 P)
N-channel Continuous Drain Current (Ta) β€” 7.6 A
N-channel Continuous Drain Current (Tc) β€” 10.2 A
P-channel Continuous Drain Current (Ta) β€” 6.6 A
P-channel Continuous Drain Current (Tc) β€” 8.8 A
Total Power Dissipation (Ta) β€” 1.4 W
Total Power Dissipation (Tc) β€” 2.5 W
Marking Code β€” 1523C03L
Channel Type β€” N-channel + P-channel enhancement mode
RoHS Status β€” Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote