IRF7907TRPBF vs IRF7313TRPBF Comparison

Detailed side-by-side comparison of IRF7907TRPBF by Infineon and IRF7313TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7907TRPBF IRF7313TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $0.27
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C β€”
Pulsed Drain Current (IDM) Max 11 A β€”
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V β€”
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) β€”
Total Power Dissipation (PD) Max 2 W β€”
Operating Temperature Range -55 C to +150 C -55C to +150C (junction)
Package 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
Mounting Type Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET Generation V (HEXFET Fifth Generation)
Lead-Free Status Yes (PBF suffix) β€”
Packaging Tape & Reel (TR) β€”
RoHS Status Compliant β€”
Channel Polarity N-Channel (both) β€”
Manufacturer β€” Infineon (formerly International Rectifier)
Part Number β€” IRF7313TRPBF
Transistor Configuration β€” Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) max β€” 6.5 A per channel
On-Resistance (RDS(on)) max β€” 29 mOhm at VGS=10V
Power Dissipation (PD) max β€” 2 W
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: Β±V rating]
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf β€” Yes (lead-free plating)
Avalanche Rated β€” Yes
MSL Level β€” 1
Qualification Standard β€” Consumer market (per IR datasheet)
Shipping Media β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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