IRF8734TRPBF vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of IRF8734TRPBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveSpecification Comparison
| Parameter | IRF8734TRPBF | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Technology | StrongIRFETβ’ (HEXFET) | IR MOSFET (HEXFET) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | β |
| Gate Charge (Qg) typ | 20 nC | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Package / Case | 8-SOIC (SO-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Avalanche Energy Rating | Fully characterized avalanche voltage | β |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | β |
| MSL Level | [DATA_NEEDED: MSL rating per J-STD-020] | β |
| Packaging | Tape & Reel (TR) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 10 A |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| On-Resistance (RDS(on)) max | β | 31 mOhm |
| Total Gate Charge (Qg) | β | 33 nC |
| Power Dissipation (TA=25C) | β | 3.6 W |
| Power Dissipation (TC=25C) | β | 156 W |
| Gate Drive Voltage (VGS recommended) | β | 10 V |
| Package | β | 8-PQFN (5x6) SuperSO8 |
| Configuration | β | Single with built-in body diode |
| Operating Temperature | β | -55C to +150C (TJ max) |