IRF8736PBF vs IRF7832TRPBF Comparison

Detailed side-by-side comparison of IRF8736PBF by Infineon and IRF7832TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736PBF IRF7832TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.92
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TA=70Β°C [DATA_NEEDED: ID at TA=70Β°C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V 4.8 mΞ© β€”
On-Resistance RDS(on) at VGS=4.5V 6.0 mΞ© (typical) β€”
Gate-Source Threshold Voltage VGS(th) Logic-level (optimized for 5 V drive) β€”
Total Gate Charge Qg 17 nC (typical) β€”
Maximum Power Dissipation at TA=25Β°C 2.5 W β€”
Operating Temperature Range -55Β°C to +150Β°C (junction) -55 C to +150 C (TJ)
Package SO-8 (8-SO) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (Unlimited) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Lead-Free, RoHS3 Compliant β€”
Qualification Standard JEDEC β€”
Avalanche Rated Yes (fully characterized avalanche voltage and current) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF7832TRPBF
FET Type β€” N-Channel
Technology β€” HEXFET (trench MOSFET)
Continuous Drain Current (ID) at TA=25C β€” 20 A
On-Resistance RDS(on) max at VGS=10V β€” 4.0 mOhm
Gate-Source Voltage (VGS) max β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) typical β€” 1.0 V to 2.5 V
Total Gate Charge (Qg) typical β€” 34 nC
Power Dissipation (PD) at TA=25C β€” 2.5 W
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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