IRF9530NPBF vs IRF4905SPBF Comparison

Detailed side-by-side comparison of IRF9530NPBF by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9530NPBF IRF4905SPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $1.18
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC=25Β°C -14 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΞ© β€”
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge (Qg) typ 38.7 nC β€”
Maximum Power Dissition at TC=25Β°C 79 W β€”
Operating Junction Temperature -55Β°C to +175Β°C -55 C to +150 C
Package TO-220AB (through-hole) D2PAK (TO-263) surface mount
Mounting Type Through Hole Surface Mount
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] β€”
Avalanche Rating Repetitive avalanche rated β€”
dv/dt Rating Dynamic dV/dt rated β€”
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant β€”
Continuous Drain Current (ID, Tc=25C) β€” -42 A
On-Resistance (RDS(on) max) β€” 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) β€” -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) β€” 170 W
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology β€” HEXFET, planar cell
Total Gate Charge (Qg) β€” 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
RoHS Status β€” Compliant (PBF suffix indicates Pb-free)
Qualification β€” JEDEC standard

Datasheets & Resources

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