IRF9540NPBF vs IRF9530NPBF Comparison

Detailed side-by-side comparison of IRF9540NPBF by Infineon and IRF9530NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9540NPBF IRF9530NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.65
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF9540NPBF β€”
Transistor Type P-Channel MOSFET (HEXFET Power MOSFET) β€”
Drain-to-Source Voltage (VDS) -100 V β€”
Continuous Drain Current (ID) at Tc -23 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/-20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V 117 mOhm β€”
Total Gate Charge (Qg) 64.7 nC β€”
Power Dissipation (PD) at Tc=25C 140 W β€”
Operating Junction Temperature Range -55 C to +175 C β€”
Package / Case TO-220AB (through-hole, 3 pins + tab) β€”
Mounting Type Through Hole Through Hole
Process Technology Planar HEXFET cell structure β€”
Qualification JEDEC standard β€”
RoHS Status Compliant β€”
Lead-Free Yes (Pb-free matte tin plating) β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -100 V
Continuous Drain Current (ID) at TC=25Β°C β€” -14 A
On-Resistance RDS(on) max @ VGS=-10V β€” 200 mΞ©
Gate-Source Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ β€” 38.7 nC
Maximum Power Dissition at TC=25Β°C β€” 79 W
Operating Junction Temperature β€” -55Β°C to +175Β°C
Package β€” TO-220AB (through-hole)
Mounting Screw Torque (max) β€” [DATA_NEEDED: maximum torque]
Avalanche Rating β€” Repetitive avalanche rated
dv/dt Rating β€” Dynamic dV/dt rated
Lead-Free / RoHS Status β€” Lead-Free (PBF suffix), RoHS compliant

Datasheets & Resources

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