IRF9540NPBF vs IRF9Z24NPBF Comparison
Detailed side-by-side comparison of IRF9540NPBF by Infineon and IRF9Z24NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF9540NPBF | IRF9Z24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF9540NPBF | β |
| Transistor Type | P-Channel MOSFET (HEXFET Power MOSFET) | β |
| Drain-to-Source Voltage (VDS) | -100 V | β |
| Continuous Drain Current (ID) at Tc | -23 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-to-Source Voltage (VGS) max | +/-20 V | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | β |
| Total Gate Charge (Qg) | 64.7 nC | β |
| Power Dissipation (PD) at Tc=25C | 140 W | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package / Case | TO-220AB (through-hole, 3 pins + tab) | β |
| Mounting Type | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes (Pb-free matte tin plating) | β |
| FET Type | β | P-Channel |
| Drain-to-Source Voltage (Vdss) | β | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | β | -12 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (Vgs) max | β | Β±20 V |
| Rds(on) max @ Vgs=-10V | β | 0.175 ohm |
| Gate Charge (Qg) typ | β | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | β | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.67 C/W |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | TO-220AB (3-pin) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Gate Threshold Voltage (Vgs(th)) typ | β | [DATA_NEEDED: Vgs(th)] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Technology | β | HEXFET (planar DMOS, Gen 5) |