IRF9540NSTRLPBF vs IRF4905STRLPBF Comparison

Detailed side-by-side comparison of IRF9540NSTRLPBF by Infineon and IRF4905STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF9540NSTRLPBF IRF4905STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.95
Manufacturer Infineon (formerly International Rectifier) β€”
Product Type Single P-Channel Power MOSFET (HEXFET) β€”
Drain-Source Voltage (Vdss) -100 V β€”
Continuous Drain Current (Id) -23 A (at Tc) β€”
On-Resistance (Rds(on)) 117 mOhm max β€”
Total Gate Charge (Qg) 64.7 nC 120 nC
Power Dissipation (Ta) 3.1 W β€”
Power Dissipation (Tc) 110 W β€”
Package D2PAK (TO-263), surface mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
Technology HEXFET, Advanced Process HEXFET (Planar)
Polarity P-Channel β€”
Operating Mode Enhancement-mode β€”
Avalanche Rated Yes β€”
Lead Finish Pb-free, RoHS-compliant β€”
Shipping Media Tape and Reel (TR suffix) β€”
FET Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at Tc=25C β€” -74 A
Pulsed Drain Current (IDM) β€” -260 A
Gate-Source Voltage (VGS) max β€” Β±20 V
On-Resistance RDS(on) at VGS=-10V β€” 20 mOhm
Power Dissipation (PD) at Tc=25C β€” 170 W
Operating Temperature Range β€” -55C to +175C
MSL Level β€” 1
RoHS Status β€” Compliant
Lead-Free β€” Yes

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