IRF9Z34NPBF vs IRFR5505TRLPBF Comparison

Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRFR5505TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9Z34NPBF IRFR5505TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.38
Manufacturer Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel
Drain-Source Voltage (Vds) -55 V
Continuous Drain Current (Id) at Tc=25C -19 A
Pulsed Drain Current (Idm) -72 A
Power Dissipation (Pd) at Tc=25C 68 W
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Temperature Range -55C to +175C (junction) -55 °C to +175 °C
Package TO-220AB (through-hole, 3-pin) TO-252AA (DPAK), surface mount
Mounting Type Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology HEXFET (5th generation) IR MOSFET™ (HEXFET® generation 5)
Lead-Free / Halogen-Free Yes (PBF suffix)
RoHS Status Compliant
Polarity P-Channel
MOSFET Operating Mode Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Lead-Free / RoHS Yes (PBF suffix)
MSL Level 1

Datasheets & Resources

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