IRF9Z34NPBF vs IRFR5505TRPBF Comparison
Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRFR5505TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF9Z34NPBF | IRFR5505TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (Vds) | -55 V | β |
| Continuous Drain Current (Id) at Tc=25C | -19 A | β |
| Pulsed Drain Current (Idm) | -72 A | β |
| Power Dissipation (Pd) at Tc=25C | 68 W | β |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | β |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss] |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | β |
| Technology | HEXFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | β |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Series | β | HEXFET |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) max | β | -55 V |
| Continuous Drain Current (ID) at TC=25C | β | -18 A |
| Pulsed Drain Current (IDM) | β | -72 A |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | β | 110 mOhm |
| Total Gate Charge (Qg) | β | 21.3 nC |
| Gate-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Rise Time (tr) | β | [DATA_NEEDED: tr] |
| Fall Time (tf) | β | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | β | 57 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | β | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | 50 C/W (typical, DPAK on 1 oz copper) |
| Lead-Free | β | Yes (PBF suffix) |