IRF9Z34NPBF vs IRLU024NPBF Comparison
Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRLU024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β ActiveSpecification Comparison
| Parameter | IRF9Z34NPBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.61 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (Vds) | -55 V | β |
| Continuous Drain Current (Id) at Tc=25C | -19 A | β |
| Pulsed Drain Current (Idm) | -72 A | β |
| Power Dissipation (Pd) at Tc=25C | 68 W | β |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | β |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | TO-220AB (through-hole, 3-pin) | IPAK (TO-251AA), Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | β |
| Technology | HEXFET (5th generation) | HEXFET Power MOSFET (5th generation) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | β |
| RoHS Status | Compliant | β |
| Part Number | β | IRLU024NPBF |
| FET Type | β | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 17 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Total Gate Charge (Qg) | β | 10 nC (typical, per listing) |
| Power Dissipation (PD) at TC=25C | β | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | 110 C/W (50 C/W PCB-mounted) |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free plating) |
| Qualification | β | JEDEC standard |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |