IRFB3207ZPBF vs IRFB4127PBF Comparison

Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRFB4127PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB3207ZPBF IRFB4127PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF IRFB4127PBF
Series HEXFET β€”
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) TrenchFET Gen 6 (HEXFET)
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID) at TC=25C 120 A β€”
Silicon-Limited Drain Current 170 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm β€”
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Power Dissition (PD) at TC=25C 300 W β€”
Operating Junction Temperature -55 C to +175 C -55C to +175C
Package TO-220AB (3-lead through-hole) β€”
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) β€”
MSL Level N/A (through-hole) β€”
Avalanche Rated Yes (improved Z-variant ruggedness) β€”
Channel Type β€” N-Channel
Drain-Source Voltage (Vdss) β€” 200 V
Continuous Drain Current (Id) at Tc β€” 76 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max β€” Β±20 V
Drain-Source On-Resistance (Rds(on)) max β€” 20 mOhm
Total Gate Charge (Qg) β€” 100 nC
Power Dissipation (Pd) at Tc β€” 375 W
Package / Case β€” TO-220AB (through-hole)
RoHS Status β€” Lead-Free (PBF suffix indicates RoHS compliance)
Configuration β€” Single

Datasheets & Resources

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