IRFB3207ZPBF vs IRFB4410PBF Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRFB4410PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3207ZPBF | IRFB4410PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.15 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | HEXFET |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | 1 (unlimited) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) @ 25C | β | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | β | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | β | 10 mOhm |
| Total Gate Charge (Qg) | β | 120 nC |
| Power Dissipation (Pd) | β | 200 W (Tc) |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Avalanche Energy Rating | β | Single-pulse avalanche rated |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |