IRFB3306PBF vs IRF4905LPBF Comparison

Detailed side-by-side comparison of IRFB3306PBF by Infineon and IRF4905LPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF4905LPBF

IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon

IRF4905LPBF βœ“ Active

Specification Comparison

Parameter IRFB3306PBF IRF4905LPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.98
FET Type N-Channel β€”
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) at Tc=25Β°C 120 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max Β±20 V Β±20 V
Rds(on) max @ Vgs=10V 4.2 mΞ© β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] β€”
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] β€”
Gate-Drain Charge (Qgd) typ 26 nC (nominal) β€”
Power Dissipation (Pd) at Tc=25Β°C 230 W β€”
Operating Junction Temperature -55Β°C to +175Β°C -55C to +150C
Package TO-220AB (through-hole) TO-262 (I2PAK), through-hole, 3-pin
Mounting Type Through Hole Through Hole
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) β€”
Avalanche Rated Yes Yes
Body Diode Intrinsic (avalanche-rated) β€”
Polarity β€” P-Channel
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) @ Tc=25C β€” -74 A
On-Resistance Rds(on) max @ Vgs=-10V β€” 20 mOhm
Gate Threshold Voltage Vgs(th) typ β€” [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C β€” 200 W
Thermal Resistance Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC value]
Rise Time (tr) typ β€” [DATA_NEEDED: rise time]
Fall Time (tf) typ β€” [DATA_NEEDED: fall time]
Lead-Free / RoHS β€” Yes (PbF suffix)

Datasheets & Resources

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