IRFB3306PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFB3306PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3306PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.62 |
| FET Type | N-Channel | β |
| Technology | IR HEXFET (MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25Β°C | 120 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Rds(on) max @ Vgs=10V | 4.2 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge Qg] | β |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) | β |
| Power Dissipation (Pd) at Tc=25Β°C | 230 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55 C to +175 C |
| Package | TO-220AB (through-hole) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) | β |
| Avalanche Rated | Yes | Yes (improved Z-variant ruggedness) |
| Body Diode | Intrinsic (avalanche-rated) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |