IRFB4020PBF vs IRFP3710PBF Comparison
Detailed side-by-side comparison of IRFB4020PBF by Infineon and IRFP3710PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4020PBF | IRFP3710PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.86 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC | 18 A | β |
| Power Dissipation (PD) at TC | 100 W | β |
| RDS(on) Maximum | 100 mOhm | β |
| Gate-Source Voltage (VGS) Maximum | 20 V | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | β |
| Operating Junction Temperature | 175 C (max) | β |
| Package | TO-220AB (through-hole) | TO-247AC (3-pin + tab) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Lead-Free (PbF suffix) | Yes | β |
| Market Qualification | Consumer | β |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Series | β | HEXFET, Fifth Generation |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) | β | 57 A (Tc) |
| Power Dissipation (PD) | β | 200 W (Tc) |
| On-Resistance RDS(on) Max | β | 25 mOhm at VGS = 10 V |
| Gate Charge (Qg) Typical | β | 66.7 nC |
| Gate-to-Source Voltage Max | β | Β±20 V |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Avalanche Rating | β | Fully Avalanche Rated |
| dv/dt Rating | β | Dynamic dv/dt Rated |
| Lead-Free | β | Yes |
| RoHS Status | β | Compliant |