IRFB4110PBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.84 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A (bond-wire limited) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΞ© | 36 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΞ© | β |
| Power Dissipation (PD) at TC=25Β°C | 370 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Technology | HEXFET (planar DMOS) | IR MOSFET (HEXFET) |
| Mounting Type | Through Hole | Surface Mount |
| RoHS Status | Compliant (Pb-free suffix) | β |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | β |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| Total Gate Charge (Qg) | β | 73.3 nC |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Operating Temperature Range | β | -55C to +175C |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |