IRFB4110PBF vs IRF1405PBF Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF1405PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IRF1405PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.42 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A (bond-wire limited) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΞ© | β |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΞ© | β |
| Power Dissipation (PD) at TC=25Β°C | 370 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Technology | HEXFET (planar DMOS) | HEXFET (Stripe Planar cell structure) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) | PbF suffix indicates lead-free / RoHS compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | β | PbF (lead-free, RoHS compliant) |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | β | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | β | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 330 W |
| R_DS(on) Maximum | β | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | β | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | β | 175 C |
| Storage Temperature Range | β | [DATA_NEEDED: storage temperature range] |
| Qualification | β | JEDEC qualified, optimized for switching below 100 kHz |
| Single Pulse Avalanche Energy (E_AS) | β | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | β | [DATA_NEEDED: thermal resistance R_theta_JC] |