IRFB4110PBF vs IRF1407PBF Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IRF1407PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.86 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A (bond-wire limited) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΞ© | β |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΞ© | β |
| Power Dissipation (PD) at TC=25Β°C | 370 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Technology | HEXFET (planar DMOS) | HEXFET (stripe-planar MOSFET) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) | β |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 130 A |
| Power Dissipation (PD) at TC=25C | β | 330 W |
| On-Resistance RDS(on) at VGS=10V | β | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | β | 160 nC (typical) |
| Maximum Junction Temperature | β | 175 C |
| Operating Temperature Range | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | β | Repetitive avalanche rated |