IRFB4110PBF vs IRF2805PBF Comparison

Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF2805PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4110PBF IRF2805PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.38
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25Β°C 120 A (bond-wire limited) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V
On-Resistance RDS(on) max at VGS=10V 4.5 mΞ© β€”
On-Resistance RDS(on) typ at VGS=10V 3.7 mΞ© β€”
Power Dissipation (PD) at TC=25Β°C 370 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package TO-220AB (through-hole) TO-220AB (3-pin, through-hole)
Technology HEXFET (planar DMOS) HEXFET Power MOSFET (IR MOSFET)
Mounting Type Through Hole Through Hole
RoHS Status Compliant (Pb-free suffix) Compliant (Pb-free)
Lead-Free Yes (PBF suffix denotes Pb-free) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF2805PBF
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc β€” 75 A
Continuous Drain Current (ID) at 25Β°C β€” 175 A (pulsed / package-limited)
On-Resistance RDS(on) max @ VGS=10V β€” 4.7 mOhm
Total Gate Charge (Qg) β€” 150 nC
Power Dissipation (PD) at Tc β€” 330 W
Maximum Junction Temperature β€” 175 Β°C
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Configuration β€” Single N-Channel MOSFET

Datasheets & Resources

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