IRFB4110PBF vs IRF3007STRLPBF Comparison

Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF3007STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4110PBF IRF3007STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.92
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ
Power Dissipation (PD) at TC=25°C 370 W
Operating Junction Temperature -55 °C to +175 °C -55°C to +175°C
Package TO-220AB (through-hole)
Technology HEXFET (planar DMOS)
Mounting Type Through Hole Surface Mount
RoHS Status Compliant (Pb-free suffix) Compliant (Lead-Free, PBF suffix)
Lead-Free Yes (PBF suffix denotes Pb-free)
Polarity N-Channel
MOSFET Operating Mode Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V
Continuous Drain Current (Id) at Tc=25°C 62 A
Pulsed Drain Current (Idm) 250 A
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Total Gate Charge (Qg) 110 nC typical
Maximum Power Dissipation (Pd) 120 W at Tc=25°C
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax)

Datasheets & Resources

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