IRFB4110PBF vs IRFB4310PBF Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRFB4310PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IRFB4310PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.95 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A (bond-wire limited) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΞ© | 7 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΞ© | β |
| Power Dissipation (PD) at TC=25Β°C | 370 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Technology | HEXFET (planar DMOS) | HEXFET (IR MOSFET) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) | Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | Yes (Pb-free PBF suffix) |
| Continuous Drain Current (ID) at Tc=25C | β | 130 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | β | 300 W |
| On-Resistance RDS(on) typical at VGS=10V | β | 5.6 mOhm |
| Total Gate Charge (Qg) | β | 170 nC |
| Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Rated | β | Yes |