IRFB4110PBF vs IRFP2907PBF Comparison

Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4110PBF IRFP2907PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $2.45
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25Β°C 120 A (bond-wire limited) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance RDS(on) max at VGS=10V 4.5 mΞ© β€”
On-Resistance RDS(on) typ at VGS=10V 3.7 mΞ© β€”
Power Dissipation (PD) at TC=25Β°C 370 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package TO-220AB (through-hole) β€”
Technology HEXFET (planar DMOS) HEXFET Stripe Planar DMOS (N-Channel)
Mounting Type Through Hole β€”
RoHS Status Compliant (Pb-free suffix) β€”
Lead-Free Yes (PBF suffix denotes Pb-free) Yes
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFP2907PBF
Drain-to-Source Voltage (V_DSS) β€” 75 V
Continuous Drain Current (I_D) at T_C = 25 C β€” 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) β€” 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C β€” 470 W
Total Gate Charge (Q_g) β€” 410 nC
Maximum Junction Operating Temperature β€” +175 C
Package / Mounting Type β€” TO-247AC (Through Hole)
Pin Count β€” 3 (Gate, Drain, Source)
RoHS Compliance β€” Yes (Pb-free)
Avalanche Rated β€” Yes (repetitive avalanche rated)
Body Diode β€” Integral (no external anti-parallel diode required)

Datasheets & Resources

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