IRFB4310PBF vs IRF1407PBF Comparison

Detailed side-by-side comparison of IRFB4310PBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4310PBF IRF1407PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.95 $0.86
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) HEXFET (stripe-planar MOSFET)
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at Tc=25C 130 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W β€”
On-Resistance RDS(on) max at VGS=10V 7 mOhm β€”
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] β€”
Total Gate Charge (Qg) 170 nC β€”
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] β€”
Operating Temperature Range -55C to +175C (junction) -55 C to +175 C
Package TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Mounting Type Through Hole Through Hole
Avalanche Rated Yes β€”
RoHS Status Compliant β€”
Lead-Free Yes (Pb-free PBF suffix) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25C β€” 130 A
Power Dissipation (PD) at TC=25C β€” 330 W
On-Resistance RDS(on) at VGS=10V β€” 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) β€” 160 nC (typical)
Maximum Junction Temperature β€” 175 C
Lead-Free / RoHS β€” Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating β€” Repetitive avalanche rated

Datasheets & Resources

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