IRFB4310PBF vs IRF3710STRLPBF Comparison
Detailed side-by-side comparison of IRFB4310PBF by Infineon and IRF3710STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4310PBF | IRF3710STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $1.23 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | β |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | β |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | β |
| Total Gate Charge (Qg) | 170 nC | 86.7 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C |
| Package | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Avalanche Rated | Yes | β |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc=25 C) | β | 57 A |
| On-Resistance RDS(on) max | β | 23 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | β | 200 W |
| Tape & Reel Orientation | β | TRL (left) |