IRFB4310PBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRFB4310PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4310PBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $1.55 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | β |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 4.5 mΞ© |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | Β±20 V |
| Total Gate Charge (Qg) | 170 nC | β |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Rated | Yes | β |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes (PBF suffix denotes Pb-free) |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |