IRFB4310PBF vs IRLB4030PBF Comparison
Detailed side-by-side comparison of IRFB4310PBF by Infineon and IRLB4030PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4310PBF | IRLB4030PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $3.10 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (StrongIRFET family) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc=25C | 130 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | β |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 4.3 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | β |
| Total Gate Charge (Qg) | 170 nC | 87 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| Package | TO-220AB (through-hole) | TO-220AB |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Rated | Yes | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (Pb-free PBF suffix) | β |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 180 A |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | β | 370 W |
| Logic Level Drive | β | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | β | JEDEC |