IRFB4410PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFB4410PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4410PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $1.62 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) - HEXFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | β |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | β |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| RDS(on) max @ VGS=10V | 10 mOhm | β |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (Pd) | 200 W (Tc) | β |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Package | TO-220AB (through-hole) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| MSL Level | 1 (unlimited) | N/A (through-hole) |
| RoHS Status | Compliant (Pb-free PBF suffix) | β |
| Series | HEXFET | HEXFET |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |