IRFB4410PBF vs IRFB4020PBF Comparison
Detailed side-by-side comparison of IRFB4410PBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4410PBF | IRFB4020PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $1.38 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) - HEXFET | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | β |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | β |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| RDS(on) max @ VGS=10V | 10 mOhm | β |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (Pd) | 200 W (Tc) | β |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant (Pb-free PBF suffix) | β |
| Series | HEXFET | β |
| Drain-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TC | β | 18 A |
| Power Dissipation (PD) at TC | β | 100 W |
| RDS(on) Maximum | β | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | β | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 1.43 C/W |
| Operating Junction Temperature | β | 175 C (max) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | β | Yes |
| Market Qualification | β | Consumer |
| Recommended Use | β | Class-D audio amplifier and high-efficiency switching applications |