IRFB52N15DPBF vs IRFB7534PBF Comparison

Detailed side-by-side comparison of IRFB52N15DPBF by Infineon and IRFB7534PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB52N15DPBF IRFB7534PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $1.85
Drain-Source Voltage (V(BR)DSS) 150 V β€”
Continuous Drain Current (ID) at TC=25C 51 A β€”
Pulsed Drain Current (IDM) 204 A β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V β€”
Total Gate Charge (Qg) 60 nC (typical) β€”
Power Dissipation (PD) at TC=25C 230 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package Type TO-220AB (through-hole) β€”
Polarity / Channel Type N-Channel Enhancement Mode β€”
Technology HEXFET (vertical DMOS, hexagonal cell) StrongIRFETβ„’ (planar N-channel)
Mounting Type Through Hole Through Hole
RoHS Status Compliant Compliant (PbF suffix)
Lead-Free Finish Yes (Pb-free PBF suffix) β€”
Qualification Standard Industrial market (per IR/Infineon) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRFB7534PBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 60 V
Continuous Drain Current (ID) at Tc=25C β€” 195 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C β€” 294 W
On-Resistance RDS(on) max at VGS=10V β€” 2.4 mOhm
Gate Threshold Voltage VGS(th) β€” 3.7 V (typ)
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Avalanche Energy Rated β€” Yes
Package β€” TO-220AB
Operating Temperature Range β€” -55C to +175C
MSL Level β€” MSL1 (unlimited floor life)

Datasheets & Resources

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