IRFB52N15DPBF vs IRFS52N15DPBF Comparison

Detailed side-by-side comparison of IRFB52N15DPBF by Infineon and IRFS52N15DPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB52N15DPBF IRFS52N15DPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $2.15
Drain-Source Voltage (V(BR)DSS) 150 V β€”
Continuous Drain Current (ID) at TC=25C 51 A β€”
Pulsed Drain Current (IDM) 204 A [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V β€”
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Power Dissipation (PD) at TC=25C 230 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
Operating Junction Temperature -55 C to +175 C -55C to +175C
Package Type TO-220AB (through-hole) β€”
Polarity / Channel Type N-Channel Enhancement Mode β€”
Technology HEXFET (vertical DMOS, hexagonal cell) HEXFET (Planar Cell)
Mounting Type Through Hole Surface Mount
RoHS Status Compliant Compliant
Lead-Free Finish Yes (Pb-free PBF suffix) β€”
Qualification Standard Industrial market (per IR/Infineon) JEDEC
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 150 V
Continuous Drain Current (ID) @ TC=25C β€” 51 A
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max]
RDS(on) max @ VGS=10V β€” 32 mOhm
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: Crss]
Power Dissipation (PD) @ TA=25C β€” 3.8 W
Power Dissipation (PD) @ TC=25C β€” 230 W
Package β€” D2PAK (TO-263) Surface Mount
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free β€” Yes

Datasheets & Resources

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