IRFB52N15DPBF vs IRFS52N15DTRLP Comparison
Detailed side-by-side comparison of IRFB52N15DPBF by Infineon and IRFS52N15DTRLP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $1.62 |
| Drain-Source Voltage (V(BR)DSS) | 150 V | β |
| Continuous Drain Current (ID) at TC=25C | 51 A | β |
| Pulsed Drain Current (IDM) | 204 A | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | 2.0 V to 4.0 V (typical 3 V) |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | β |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at TC=25C | 230 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package Type | TO-220AB (through-hole) | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar) |
| Mounting Type | Through Hole | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | Yes (matte tin) |
| Qualification Standard | Industrial market (per IR/Infineon) | β |
| FET Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | β | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | β | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | β | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | β | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | β | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | β | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA in C/W] |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Package | β | D2PAK (TO-263) surface mount |
| Pin Count | β | 3 (Gate, Drain, Source) + tab |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for D2PAK) |