IRFB7534PBF vs FDP030N06 Comparison

Detailed side-by-side comparison of IRFB7534PBF by Infineon and FDP030N06 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB7534PBF FDP030N06
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $1.89
Manufacturer Infineon Technologies β€”
Part Number IRFB7534PBF β€”
Technology StrongIRFETβ„’ (planar N-channel) PowerTrench (Trench)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) max 60 V β€”
Continuous Drain Current (ID) at Tc=25C 195 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Power Dissipation (PD) at Tc=25C 294 W β€”
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm β€”
Gate Threshold Voltage VGS(th) 3.7 V (typ) β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Avalanche Energy Rated Yes β€”
Package TO-220AB TO-220-3 (3+Tab)
Mounting Type Through Hole Through Hole
Operating Temperature Range -55C to +175C β€”
RoHS Status Compliant (PbF suffix) [DATA_NEEDED: RoHS compliance status]
MSL Level MSL1 (unlimited floor life) β€”
FET Type β€” N-Channel MOSFET
Drain to Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) @ 25C β€” 120 A (Tc)
Continuous Drain Current (datasheet rating) β€” 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs β€” 3.2 mOhm
RDS(on) Typ β€” 2.6 mOhm
Power Dissipation (Tc) β€” 231 W (Tc)
Gate Drive Type β€” Standard level gate drive
Switching Speed β€” Fast
Gate Input Resistance β€” Low gate input resistance (low gate charge)
Avalanche Test β€” 100% avalanche tested
Packing β€” Tube
Typical Applications β€” Power supply, switching applications

Datasheets & Resources

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