IRFB7534PBF vs IRL3705NPBF Comparison

Detailed side-by-side comparison of IRFB7534PBF by Infineon and IRL3705NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB7534PBF IRL3705NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $0.92
Manufacturer Infineon Technologies β€”
Part Number IRFB7534PBF β€”
Technology StrongIRFETβ„’ (planar N-channel) HEXFET (planar cell, fifth generation)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) max 60 V β€”
Continuous Drain Current (ID) at Tc=25C 195 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Power Dissipation (PD) at Tc=25C 294 W β€”
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm β€”
Gate Threshold Voltage VGS(th) 3.7 V (typ) β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Avalanche Energy Rated Yes β€”
Package TO-220AB TO-220AB (3-pin through-hole)
Mounting Type Through Hole Through Hole
Operating Temperature Range -55C to +175C β€”
RoHS Status Compliant (PbF suffix) Compliant (per PBF suffix)
MSL Level MSL1 (unlimited floor life) β€”
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 55 V
Continuous Drain Current (I_D) at Tc β€” 89 A
Pulsed Drain Current β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc β€” 170 W
On-Resistance R_DS(on) β€” 10 mOhm (typical, V_GS = 5 V)
Gate Threshold V_GS(th) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Q_g β€” 65.3 nC
Maximum Junction Temperature β€” 175 C
Gate Drive Level β€” Logic-level
Avalanche Rated β€” Yes (ruggedized single-pulse avalanche)
Lead-Free (PBF suffix) β€” Yes

Datasheets & Resources

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