IRFB7545PBF vs IPB019N08N3GATMA1 Comparison

Detailed side-by-side comparison of IRFB7545PBF by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB7545PBF IPB019N08N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $2.74
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB7545PBF β€”
Technology StrongIRFETβ„’ (HEXFET, N-Channel) MOSFET (Metal Oxide)
Polarity N-Channel β€”
VDS (Drain-Source Voltage) max 60 V β€”
VGS (Gate-Source Voltage) max Β±20 V β€”
RDS(on) max at VGS=10V 5.9 mOhm β€”
Continuous Drain Current (ID) at Tc=25C 95 A β€”
Pulsed Drain Current (IDM) 380 A β€”
Single-Pulse Avalanche Current (IAS) 57 A β€”
Power Dissipation (PD) at Tc=25C 125 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (Through-Hole) PG-TO263-7 (D2PAK-6, surface mount)
Mounting Type Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) β€”
MSL Level N/A (Through-Hole) β€”
Gate Drive Voltage (typical) 10 V β€”
Avalanche Energy Rated Yes β€”
Series β€” OptiMOS 3
FET Type β€” N-Channel
Drain-to-Source Voltage (Vdss) β€” 80 V
Continuous Drain Current (Id) @ Tc=25Β°C β€” 180 A
Power Dissipation (Pd) @ Tc=25Β°C β€” 300 W
On-Resistance RDS(on) Max @ VGS=10V β€” 1.9 mΞ©
Gate Threshold Voltage (Vgs(th)) β€” 3.5 V
Drive Voltage (Rds On Max) β€” 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V β€” 206 nC
Input Capacitance (Ciss) β€” 14.2 nF
Output Capacitance (Coss) β€” 3.84 nF
Reverse Transfer Capacitance (Crss) β€” 3.84 nF
Operating Temperature Range β€” -55 Β°C to +175 Β°C
RoHS Status β€” Compliant

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