IRFB7545PBF vs IRFB4127PBF Comparison
Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRFB4127PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB7545PBF | IRFB4127PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB7545PBF | IRFB4127PBF |
| Technology | StrongIRFETβ’ (HEXFET, N-Channel) | TrenchFET Gen 6 (HEXFET) |
| Polarity | N-Channel | β |
| VDS (Drain-Source Voltage) max | 60 V | β |
| VGS (Gate-Source Voltage) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 5.9 mOhm | β |
| Continuous Drain Current (ID) at Tc=25C | 95 A | β |
| Pulsed Drain Current (IDM) | 380 A | β |
| Single-Pulse Avalanche Current (IAS) | 57 A | β |
| Power Dissipation (PD) at Tc=25C | 125 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-220AB (Through-Hole) | β |
| Mounting Type | Through Hole (THT) | Through Hole |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | β |
| MSL Level | N/A (Through-Hole) | β |
| Gate Drive Voltage (typical) | 10 V | β |
| Avalanche Energy Rated | Yes | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 200 V |
| Continuous Drain Current (Id) at Tc | β | 76 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Drain-Source On-Resistance (Rds(on)) max | β | 20 mOhm |
| Total Gate Charge (Qg) | β | 100 nC |
| Power Dissipation (Pd) at Tc | β | 375 W |
| Package / Case | β | TO-220AB (through-hole) |
| RoHS Status | β | Lead-Free (PBF suffix indicates RoHS compliance) |
| Configuration | β | Single |