IRFB7545PBF vs IRFZ48NPBF Comparison

Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRFZ48NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF βœ“ Active

Specification Comparison

Parameter IRFB7545PBF IRFZ48NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.65
Manufacturer Infineon Technologies β€”
Part Number IRFB7545PBF β€”
Technology StrongIRFETβ„’ (HEXFET, N-Channel) HEXFET (advanced planar)
Polarity N-Channel β€”
VDS (Drain-Source Voltage) max 60 V β€”
VGS (Gate-Source Voltage) max Β±20 V β€”
RDS(on) max at VGS=10V 5.9 mOhm β€”
Continuous Drain Current (ID) at Tc=25C 95 A β€”
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A β€”
Power Dissipation (PD) at Tc=25C 125 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-220AB (Through-Hole) TO-220AB (through-hole)
Mounting Type Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) β€”
MSL Level N/A (Through-Hole) β€”
Gate Drive Voltage (typical) 10 V β€”
Avalanche Energy Rated Yes β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC β€” 64 A
Gate-to-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) at VGS=10V β€” 14 mΞ© (maximum)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) β€” 54 nC
Power Dissipation (PD) at TC β€” 130 W
Lead-Free (PBF suffix) β€” Yes
RoHS Status β€” Compliant
Qualification Standard β€” Industrial market

Datasheets & Resources

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