IRFH5015TRPBF vs IPP069N20NM6AKSA1 Comparison

Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IPP069N20NM6AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF βœ“ Active

Specification Comparison

Parameter IRFH5015TRPBF IPP069N20NM6AKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $4.10
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at TA=25C 10 A 15.3 A
Continuous Drain Current (ID) at TC=25C 56 A 136 A
On-Resistance (RDS(on)) max 31 mOhm β€”
Total Gate Charge (Qg) 33 nC β€”
Power Dissipation (TA=25C) 3.6 W β€”
Power Dissipation (TC=25C) 156 W β€”
Gate Drive Voltage (VGS recommended) 10 V β€”
Package 8-PQFN (5x6) SuperSO8 PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
Mounting Type Surface Mount Through Hole
Configuration Single with built-in body diode β€”
Operating Temperature -55C to +150C (TJ max) β€”
RoHS Status Compliant Compliant
Power Dissipation (PD) at TC=25C β€” 300 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
On-Resistance RDS(on) max at VGS=10V β€” 6.9 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) β€” [DATA_NEEDED: Qg value]
Operating Temperature Range β€” -55C to +175C
Lead-Free β€” Yes
MSL Level β€” N/A (through-hole package)
Tab Connection β€” Electrically connected to Drain

Datasheets & Resources

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