IRFH5015TRPBF vs IRF8734TRPBF Comparison

Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRF8734TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF βœ“ Active

Specification Comparison

Parameter IRFH5015TRPBF IRF8734TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.48
FET Type N-Channel β€”
Technology IR MOSFET (HEXFET) StrongIRFETβ„’ (HEXFET)
Drain-Source Voltage (VDS) 150 V 30 V
Continuous Drain Current (ID) at TA=25C 10 A β€”
Continuous Drain Current (ID) at TC=25C 56 A β€”
On-Resistance (RDS(on)) max 31 mOhm β€”
Total Gate Charge (Qg) 33 nC β€”
Power Dissipation (TA=25C) 3.6 W β€”
Power Dissipation (TC=25C) 156 W β€”
Gate Drive Voltage (VGS recommended) 10 V β€”
Package 8-PQFN (5x6) SuperSO8 β€”
Mounting Type Surface Mount Surface Mount
Configuration Single with built-in body diode β€”
Operating Temperature -55C to +150C (TJ max) β€”
RoHS Status Compliant Compliant (PBF suffix)
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 21 A
On-Resistance RDS(on) max at VGS=10V β€” 3.5 mOhm
Gate Charge (Qg) typ β€” 20 nC
Power Dissipation (PD) at Ta β€” 2.5 W
Package / Case β€” 8-SOIC (SO-8)
Operating Temperature Range β€” -55C to +150C (junction)
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
Avalanche Energy Rating β€” Fully characterized avalanche voltage
Lead-Free / Halogen-Free β€” Lead-free (PBF suffix)
MSL Level β€” [DATA_NEEDED: MSL rating per J-STD-020]
Packaging β€” Tape & Reel (TR)

Datasheets & Resources

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