IRFH5020TRPBF vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of IRFH5020TRPBF by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IRFH5020TRPBF | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.74 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | β |
| FET Type | MOSFET N-Channel, Metal Oxide | β |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 5.1 A | β |
| Pulsed Drain Current (IDM) | 63 A | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 55 mΞ© | β |
| Gate Charge (Qg) typ | 11 nC | β |
| Power Dissipation (TA=25Β°C) | 3.6 W | β |
| Power Dissipation (TC=25Β°C) | 8.3 W | β |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 Β°C/W | β |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Profile Height | β€ 0.9 mm | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ max) | -55C to +175C |
| Qualification Standard | JEDEC (Normal level) | β |
| Gate Drive Optimization | 10 V VGS | β |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | β |
| MSL Level | 1 (per industry standard for PQFN-8) | 1 (unlimited) |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Package | β | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Technology | β | Trench (OptiMOS 5, thin-wafer) |
| RoHS Status | β | Compliant |