IRFH5020TRPBF vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of IRFH5020TRPBF by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveInfineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveSpecification Comparison
| Parameter | IRFH5020TRPBF | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.78 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | β |
| FET Type | MOSFET N-Channel, Metal Oxide | β |
| Configuration | Single with built-in diode | Single N-Channel with Built-in Diode |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 5.1 A | β |
| Pulsed Drain Current (IDM) | 63 A | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 55 mΞ© | β |
| Gate Charge (Qg) typ | 11 nC | β |
| Power Dissipation (TA=25Β°C) | 3.6 W | β |
| Power Dissipation (TC=25Β°C) | 8.3 W | β |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 Β°C/W | β |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Profile Height | β€ 0.9 mm | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | β |
| Gate Drive Optimization | 10 V VGS | β |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | β |
| MSL Level | 1 (per industry standard for PQFN-8) | β |
| Part Family | β | OptiMOS 30V |
| Technology | β | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Package | β | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |
| RoHS Status | β | Compliant |