IRFH5020TRPBF vs IRF7416TRPBF Comparison
Detailed side-by-side comparison of IRFH5020TRPBF by Infineon and IRF7416TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β Active
Specification Comparison
| Parameter | IRFH5020TRPBF | IRF7416TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Product Family | HEXFET Power MOSFET | β |
| FET Type | MOSFET N-Channel, Metal Oxide | P-Channel |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (VDS) | 200 V | -30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 5.1 A | β |
| Pulsed Drain Current (IDM) | 63 A | -50 A |
| Gate-to-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max rating] |
| RDS(on) max at VGS=10V | 55 mΞ© | β |
| Gate Charge (Qg) typ | 11 nC | β |
| Power Dissipation (TA=25Β°C) | 3.6 W | β |
| Power Dissipation (TC=25Β°C) | 8.3 W | β |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 Β°C/W | β |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Profile Height | β€ 0.9 mm | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ max) | β |
| Qualification Standard | JEDEC (Normal level) | β |
| Gate Drive Optimization | 10 V VGS | β |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | β |
| MSL Level | 1 (per industry standard for PQFN-8) | 1 (unlimited) |
| Technology | β | HEXFET (IR MOSFET) |
| Continuous Drain Current (ID) at TA=25C | β | -10 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 20 mOhm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | β | -1 V to -3 V |
| Total Gate Charge (Qg) | β | 61 nC |
| Power Dissipation (PD) max at TA=25C | β | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | β | 50 C/W |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Package | β | 8-SO (SOIC-8) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |