IRFH7084TRPBF vs IRF7469TRPBF Comparison

Detailed side-by-side comparison of IRFH7084TRPBF by Infineon and IRF7469TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH7084TRPBF

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ Active

Specification Comparison

Parameter IRFH7084TRPBF IRF7469TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.37
FET Type N-Channel N-Channel
Technology StrongIRFET™ (trench MOSFET) IR MOSFET™ (HEXFET)
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A
Silicon-Limited Drain Current 265 A
Power Dissipation (PD, Tc=25°C) 156 W
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V 6560 pF
Operating Temperature Range -55°C to +175°C (TJ) -55°C to +150°C (Tj)
Package 8-PQFN 5x6 mm (SuperSO8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS Status Compliant Compliant
Halogen Free Compliant
RthJC max 0.96 °C/W (per datasheet)
Drain-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) at TA=25°C 9 A
Rds(on) Max at Vgs=10V 17 mΩ
Total Gate Charge (Qg) 15 nC
Gate-Source Voltage (Vgs) Max ±20 V
Power Dissipation (Pd) at TA=25°C 2.5 W
Lead-Free Yes
Halogen-Free Yes
Channel Mode Enhancement
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Output Capacitance (Coss) [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]

Datasheets & Resources

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